▎ 摘　　要

NOVELTY - The resistive RAM (100) has a resistive layer (120) that is arranged on a substrate for causing the device to generate a high-resistance state or a low-resistance state when the device performs a writing or erasing operation. An upper electrode (150) is arranged on the resistive layer and is used as a lead-out electrode of the device. A potential barrier structure is arranged between the resistive switching layer and upper electrode. The electrons are passed through the conduction band of the potential barrier structure to prevent the resistive switching layer from forming defects and causing reverse breakdown of the resistive switching layer when the device performs an erasing operation. The resistive layer is made of tantalum pentoxide. A barrier layer (130) is made of tantalum oxide. The intercalation material is one of tantalum, titanium, metal oxide, amorphous silicon, amorphous carbon and graphene. USE - Resistive RAM used in application such as logic circuit and neural morphology calculation. ADVANTAGE - The resistance change layer is set on the substrate, for performing writing or erasing operation on the device, so that the device generates high resistance state or low resistance state. The barrier structure is set between the resistance-change layer and the upper electrode, and the electron is passed through the conduction band of the barrier structure, so as to avoid the formation defect of the resistive-switching layer, thus causing reverse breakdown of the resistance switch layer. The oxygen ion is prevented from directly entering the lower electrode, thus preventing the oxygen ion from directly flowing through the upper electrodes, and hence preventing the device from being damaged. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing resistive RAM. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the resistive RAM. Resistive RAM (100) Lower electrode (110) Resistive layer (120) Barrier layer (130) Upper electrode (150)