• 专利标题:   Manufacturing graphene-metal structure for semiconductor device by subjecting graphene to surface treatment and forming metal layer on surface-treated graphene.
  • 专利号:   KR2021007367-A
  • 发明人:   KIM J H, LEE S Y, AHN S J, KIM J, LIM H S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, UNIV KOREA RES BUSINESS FOUND
  • 国际专利分类:   C01B032/194, H01L021/02, H01L021/285, H01L029/16
  • 专利详细信息:   KR2021007367-A 20 Jan 2021 H01L-029/16 202112 Pages: 14
  • 申请详细信息:   KR2021007367-A KR083699 11 Jul 2019
  • 优先权号:   KR083699

▎ 摘  要

NOVELTY - A graphene-metal structure is manufactured by subjecting graphene (30) to surface treatment and forming metal layer (40) on surface-treated graphene, where surface-treated graphene has ratio of G peak to D peak in the Raman spectrum of 2-3. USE - Manufacture of graphene-metal structure for semiconductor device (claimed). ADVANTAGE - Even if a thin metal layer is deposited on graphene, the thermal conductivity and electrical conductivity of the metal layer are not impaired due to the difference in the heat transfer coefficient between graphene and the metal layer, and the electrical conductivity of the metal layer is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor device comprising metal layer disposed on barrier layer which includes graphene and is disposed on a substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a graphene-metal structure. Graphene (30) Metal layer (40)