▎ 摘　　要

NOVELTY - The photo-detection device (1) has a light detection layer (150) that is formed on a substrate (100). The electrodes (210,310) are formed on the light detection layer having specific detectivity in 350-1100 nm range. The n-type graphene (200) and the p-type graphene (300) are welded to p-n perpendicularity homogeneous vertical junction. The n-type graphene and the p-type graphene are laminated successively to the light detection layer, and are contacted with each other. The n-type graphene is provided with a highly resistive layer formed in the boundary face of the p-type graphene. USE - Photo-detection device used for optoelectronic device. ADVANTAGE - The doped graphene is utilized by the photo-detection device and the graphene p-n perpendicularity junction can be made., including the manufactured graphene p-n junction The optical and the electrical characteristic of the photo detection device are evaluated according to the doping amount of the photo-detection device. The various semiconductor layers or the insulating layers are inserted between the p-n perpendicularity junction of the graphene so that the manufacturing of the photo-detection device is performed with high efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the photo-detection device. Photo-detection device (1) Substrate (100) Light detection layer (150) Graphenes (200,300) Electrodes (210,310)