• 专利标题:   Opening graphene band gap comprises e.g. separately preparing gallium oxide layer and graphene layer, transferring the graphene layer onto the gallium oxide layer, and changing the electronic structure of the graphene.
  • 专利号:   CN110429026-A
  • 发明人:   SU J, YUAN H, LIN Z, CHANG J, HAO Y
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C01B032/186, C01B032/194, H01L021/02
  • 专利详细信息:   CN110429026-A 08 Nov 2019 H01L-021/02 201990 Pages: 10 Chinese
  • 申请详细信息:   CN110429026-A CN10752677 15 Aug 2019
  • 优先权号:   CN10752677

▎ 摘  要

NOVELTY - Opening graphene band gap comprises separately preparing gallium oxide layer and graphene layer, transferring the graphene layer onto the gallium oxide layer, changing the electronic structure of the graphene by charge transfer between gallium oxide and graphene to form a gallium oxide/graphene heterojunction, and opening the graphene band gap. USE - The method is useful for opening graphene band gap. ADVANTAGE - The method: has simple preparation process and clear device structure; and can open the graphene band gap to a large extent, which is of great significance for applying graphene to the field of semiconductor electronic devices.