• 专利标题:   Directional growth of graphene comprises placing base material in reaction chamber, applying voltage, adding hydrogen gas, heating, adding carbon-based compound gas, generating plasma, controlling temperature and cooling.
  • 专利号:   CN104163418-A
  • 发明人:   DENG S, ZHANG Y, XU N
  • 专利权人:   UNIV SUN YATSEN
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104163418-A 26 Nov 2014 C01B-031/04 201506 Pages: 8 Chinese
  • 申请详细信息:   CN104163418-A CN10334851 02 Aug 2013
  • 优先权号:   CN10182133

▎ 摘  要

NOVELTY - Directional growth of graphene comprises placing base material in reaction chamber, applying voltage, adding hydrogen gas, heating, adding carbon-based compound gas, generating plasma, controlling temperature and cooling. USE - Method for directionally growing graphene (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation system comprising plasma generating source, supply chamber, sample frame, anode and cathode plates, voltage device, vacuum pump, gas source, flow controllers and voltage supply.