▎ 摘　　要

NOVELTY - The method involves forming a nanometer column array layer on a surface of a semiconductor substrate. The nanometer column array layer is provided with another semiconductor substrate. The latter semiconductor substrate is provided with a conductive type surface. An active layer is located under a semiconductor layer and closed to the former semiconductor substrate. A continuous graphene cover layer is formed on a surface of the nanometer column array layer. A metal electrode layer is formed on a surface of the cover layer. USE - Method for preparing LED (claimed). ADVANTAGE - The nanometer column array structure of the LED can relieve lattice mismatch for heterogeneous growth so as to improve the compound efficiency of a current carrier. The nanometer column array structure can prevent the problems of low conversion efficiency and poor stability caused by the heating of expanded resistor for multilayer film and horizontal structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a solar battery. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating an LED preparation method.'(Drawing includes non-English language text)'