▎ 摘　　要

NOVELTY - Annealing of sapphire substrate comprises putting copper foil into reaction chamber, and introducing hydrogen gas (H2); introducing argon (Ar) and methane gas into reaction chamber; soaking into 0.05-0.15 g/ml ferric pernitrate (Fe(NO4)3) solution for 30-60 minutes using sapphire substrate salvaged; soaking in acetone for 24 hours to completely remove residual polymethyl methacrylate (PMMA); rinsing with ethanol and deionized water, and drying high-purity nitrogen gas; evacuating the reaction chamber, passing into Ar gas; and introducing mixed gas of Ar and H2. USE - Method for annealing sapphire substrate used for transfer of graphene (claimed). ADVANTAGE - The method has low-temperature annealing with hydrogen gas atmosphere to remove the water molecules adsorbed on the surface of graphene and other impurities; repairing substrate transfer of graphene defects generated, further removing unremoved impurities, and improving contact of substrate and graphene (claimed); optimizing adhering of the electrical properties of the graphene on the sapphire substrate, and ultimately enable clean transfer surface of the graphene, and fewer defects.