▎ 摘　　要

NOVELTY - A monocrystalline silicon substrate orderly cleaned using acetone, alcohol and deionized water is placed on heating table in magnetic control sputtering coating system, vacuum-obtaining system and heating device are initiated and heat-preserved. Sputtering power on carbon target and germanium target and flow rate of gas, are regulated and pre-sputtered. A film is coated on surface of substrate. All power sources are turned off, and the vacuum bin is cooled to room temperature. Obtained germanium carbide raw material is heated under protection of argon gas, to obtain graphene. USE - Preparation of graphene. ADVANTAGE - The method economically provides graphene having uniform thickness, with reduced energy consumption. DETAILED DESCRIPTION - A monocrystalline silicon substrate is orderly cleaned using acetone, alcohol and deionized water for 15-30 minutes, 15-30 minutes and 15-30 minutes, respectively under frequency of 20-35 KHz. The cleaned monocrystalline silicon substrate is placed on a heating table in a magnetic control sputtering coating system, and a baffle is pushed in front of a target, then a vacuum-obtaining system for vacuumizing vacuum bin is initiated until vacuum degree becomes 1x 10-4-9.9x 10-4 Pa, then a heating device for regulating temperature of vacuum bin is initiated to 25-650 degrees C, and heat-preserved for 10-120 minutes. Sputtering power on carbon target and germanium target is initially regulated to 60-200 W and 60-200 W, respectively, and flow rate of gas is regulated to 10-100 sccm, and pre-sputtered for 3-5 minutes. Then, pressure in the vacuum bin is increased to 0.1-2 Pa, and the baffle is moved away under sputtering power on the carbon target of 60-200 W, sputtering power on the germanium target of 60-200 W, and flow rate of gas of 10-100 sccm. A film is coated on surface of monocrystalline silicon substrate by sputtering for 1-10 minutes. All power sources are turned off, and the vacuum bin is cooled to room temperature, to obtain germanium carbide raw material. Obtained germanium carbide raw material is heated under protection of argon gas at 900-1100 degrees C for 1-2 hours, to obtain graphene.