▎ 摘　　要

NOVELTY - The transistor has a silicon substrate provided with a graphene channel, gate electrodes, an aluminum sulfate Trioxygen gate dielectric layer, a 3C-Silicon carbide epitaxial layer and a carbonization layer. A side part of the graphene channel is equipped with the gate electrode, where width and length of the graphene channel is about in range of 40nm-4um and 35 to 600nm. The graphene channel is provided with the gate electrode. USE - Silicon substrate aluminum oxide gate di-electric dual-gate graphene transistor. ADVANTAGE - The transistor has high carrier mobility effect and better scattering effect property. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon substrate aluminum oxide gate di-electric dual-gate graphene transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a silicon substrate aluminum oxide gate di-electric dual-gate graphene transistor.