▎ 摘　　要

NOVELTY - The method involves depositing (S1) the graphene layer on a copper foil surface. A metal layer is deposited (S2) on graphene layer surface. A graphene film is formed (S3) on the metal layer surface seat supporting layer. A graphene film is provided (S4) in the copper corrosion liquid. The support layer and metal layer are partially immersed in copper corrosion liquid. A source drain electrode graph is defined (S5) on the metal layer surface, and a grid electrode of target substrate is prepared on one side far from graphene layer, to obtain graphene thin film transistor. USE - Method for preparing graphene thin film transistor. ADVANTAGE - The increase of graphene layer surface residual impurities caused by the source drain electrode and graphene is reduced efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing graphene thin film transistor. (Drawing includes non-English language text) Step for depositing graphene layer on a copper foil surface (S1) Step for depositing metal layer on graphene layer surface (S2) Step for forming graphene film on metal layer surface seat supporting layer (S3) Step for providing graphene film in copper corrosion liquid (S4) Step for defining source drain electrode graph on metal layer surface, and preparing grid electrode of target substrate on one side far from graphene layer, to obtain graphene thin film transistor (S5)