▎ 摘　　要

NOVELTY - The method comprises forming graphene layer in a catalytic metal film, separating graphene from the catalytic metal film, forming a nanosphere layer arranged on the surface of graphene, etching the nanosphere layer to the graphene as etching mask, and removing nanosphere layer from the graphene. The step of forming the graphene layer comprises placing the catalytic metal film in a reactor, supplying vapor phase carbon inside the reactor, and reacting the catalytic metal film and vapor phase carbon to heat-treat. The method further comprises adjusting the thickness of the catalytic metal film. USE - The method is useful for manufacturing a graphene quantum dot (claimed). ADVANTAGE - The method is capable of efficiently and rapidly manufacturing the quantum dot with excellent luminous efficiency and conductivity. DETAILED DESCRIPTION - The method comprises forming graphene layer in a catalytic metal film, separating graphene from the catalytic metal film, forming a nanosphere layer arranged on the surface of graphene, etching the nanosphere layer to the graphene as etching mask, and removing nanosphere layer from the graphene. The step of forming the graphene layer comprises placing the catalytic metal film in a reactor, supplying vapor phase carbon inside the reactor, and reacting the catalytic metal film and vapor phase carbon to heat-treat. The method further comprises adjusting the thickness of the catalytic metal film by controlling the graphene layer, and transferring the graphene. The vapor phase carbon supplying step comprises controlling the concentration of the graphene layer. The heat treatment step comprises regulating the thermal processing annealing time and heat-treating speed. The transferring step comprises selectively etching the graphene formed in the catalytic metal film using a solution to remove the catalyst metal film. The step of forming the nanosphere layer comprises coating an upper portion of the graphene by spin coating method, slit coating method, drop-casting method and dip casting method. The etching step is reactive ion etching method. The removing step comprises dissolving the nanosphere in the solution. An INDEPENDENT CLAIM is included for a graphene quantum dot.