▎ 摘 要
NOVELTY - Manufacturing carbon material doped with nitrogen and sulfur, comprises adding carbon solid raw material, solid raw material containing nitrogen and solid raw material containing sulfur into thermal plasma reactor, introducing ammonia at a rate of 10-20 LPM, where the carbon is included in 60-98 wt.% of the total raw materials, the nitrogen is included in 1-25 wt.% of the total raw materials, and the sulfur is included in 1-15 wt.% of the total raw materials, forming a plasma state under a process temperature of 5000-20000 K and a process pressure of 300-600 torr, where the raw material containing nitrogen and raw material containing sulfur are in a plasma state, and the carbon solid raw material breaks some of the sp2 bonds of carbon, resulting in defects, doping nitrogen or sulfur in a plasma state under a process temperature of 1500-2500 K and a process pressure of 300-600 torr, and doping the defect of the carbon solid raw material with nitrogen or sulfur in the plasma state. USE - The method is useful for manufacturing carbon material doped with nitrogen and sulfur. ADVANTAGE - The method is possible to easily obtain carbon material doped with nitrogen and sulfur in a short time by using thermal plasma. The material can be variously used as basic material for printed electronics such as ink, electromagnetic wave shielding film, electrodes of various circuit boards, solar cells, and batteries. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for carbon material doped with nitrogen and sulfur, comprising a two-dimensional planar structure consisting of sp2 covalent bonds between carbon-carbon, carbon-nitrogen, and carbon-sulfur atoms, and the carbon material contains carbon in an amount of 72-88 wt.% of the total material weight, the nitrogen contained in 8-20 wt.% of the total material weight and the sulfur contained in 4-8 wt.% of the total material weight.