▎ 摘　　要

NOVELTY - The method comprises growing a layer of silicon oxide layer on the surface of the crystal silicon substrate, using plasma enhanced chemical vapor deposition method to insitu deposit a layer of graphene film on the surface of the silicon oxide layer, coating Nafion (RTM: Sulfonated tetrafluoroethylene based fluoropolymer-copolymer)solution on the surface of the graphene film, annealing at 70-150 degrees C, forming graphene mixed film mixed with Nafion (RTM: Sulfonated tetrafluoroethylene based fluoropolymer-copolymer) film on the graphene film, using plasma enhanced chemical vapor deposition and plasma technology to etch the Nafion (RTM: Sulfonated tetrafluoroethylene based fluoropolymer-copolymer)film of graphene mixed film surface, and exposing the graphene film to obtain the hole transport layer. USE - Method for preparing hole transport layer, which is useful in crystal silicon solar cell. ADVANTAGE - The method: realizes chemical doping of the graphene film; improves mixed film work function; ensures conductivity of the film; improves photoelectric conversion efficiency of the graphene mixed film hole transport layer crystal silicon solar battery.