▎ 摘　　要

NOVELTY - Growing of large-sized monocrystalline graphene on silicon carbide substrate involves polishing and cleaning a silicon carbide substrate, placing the silicon carbide substrate in a graphite heater of high-temperature chemical-vapor deposition graphene growth furnace, introducing highly-pure argon and hydrogen, slowly heating, performing hydrogen etching, placing a fine thermally-conductive probe on the silicon carbide substrate, supplying carbon source gas, growing graphene on the substrate, obtaining large-sized monocrystalline graphene, introducing argon gas, and cooling the furnace. USE - Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device. ADVANTAGE - The method enables efficient growing of large-sized monocrystalline graphene on silicon carbide substrate, without requiring transfer of grown large-sized monocrystalline graphene. DETAILED DESCRIPTION - Growing of large-sized monocrystalline graphene on silicon carbide substrate involves polishing and cleaning a silicon carbide substrate, placing the silicon carbide substrate in a graphite heater of high-temperature chemical-vapor deposition graphene growth furnace, maintaining the vacuum degree in the growth chamber to 10-3-10-4 Pa, increasing furnace temperature to 1200-1300 degrees C, introducing highly-pure argon and hydrogen, maintaining the furnace pressure to 800-900 mbar, slowly heating to 1500-1600 degrees C for 10-15 minutes, performing hydrogen etching, terminating flow of hydrogen gas, slowly cooling the furnace to 1400-1500 degrees C for 10-30 minutes, reducing the furnace temperature to 800-1100 degrees C under argon atmosphere, placing a fine thermally-conductive probe on the silicon carbide substrate, maintaining the substrate temperature to 800-1100 degrees C, maintaining the furnace pressure to 800-900 mbar, supplying carbon source gas, growing graphene on the substrate, obtaining large-sized monocrystalline graphene, introducing argon gas, controlling furnace pressure to 800-900 mbar, slowly cooling to 600-700 degrees C, terminating flow of argon gas and cooling the furnace.