▎ 摘　　要

NOVELTY - Manufacturing heterojunction bipolar transistor (HBT) in bipolar complementary metal oxide semiconductor (BiCMOS) device involves providing a substrate comprising CMOS device region and HBT device region; forming well regions in the substrate, where neighboring well regions are isolated by a shallow trench; forming a collector region of a first conductivity type above the well region of a first conductivity type in the HBT device region. The intrinsic base region of a second conductivity type is formed above the collector region. The emitter region of the first conductivity type is formed above the intrinsic base region. The raised extrinsic base region of the second conductivity type is formed on both sides of the emitter region, where the extrinsic base region contains graphene regions formed. USE - Method for manufacturing heterojunction bipolar transistors (HBT) integrated with complementary metal oxide semiconductor (CMOS) circuits i.e. BiCMOS. ADVANTAGE - Because of good mobility of graphene, the base resistance of the silicon germanium HBT can be reduced to enhance its performance at high operation frequency. The method is easily controlled and is able to be integrated into conventional BiCMOS device process. The extrinsic base region comprising the graphene regions with better conductivity, so that the smaller base resistance can be obtained and the better performance of the heterojunction bipolar transistor can be achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a BiCMOS device comprising: a substrate comprising a CMOS device region and a HBT device region.