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  • 专利标题:   Manufacture of active layer of resistive memory element involves preparing suspension of graphene, adding hydrofluoric acid and forming active layer on substrate using resultant mixture.
  • 专利号:   RU2015101059-A, RU2603160-C2
  • 发明人:   ANTONOVA I V, NEBOGATIKOVA N A, PRINTS V YA
  • 专利权人:   AS SIBE SEMICONDUCTORS PHYSICS INST, AS SIBE SEMICONDUCTORS PHYSICS INST
  • 国际专利分类:   G11C016/02, B82B003/00, B82Y040/00, C01B031/04, G11C014/00
  • 专利详细信息:   RU2015101059-A 27 Jul 2016 G11C-016/02 201668 Pages: 1 Russian
  • 申请详细信息:   RU2015101059-A RU101059 12 Jan 2015
  • 优先权号:   RU101059

▎ 摘　　要

NOVELTY - Manufacture of active layer of resistive memory element involves preparing a suspension of graphene, adding 50-80% hydrofluoric acid and forming an active layer on a substrate using resultant mixture. USE - Manufacture of active layer of resistive memory element (claimed).