▎ 摘　　要

NOVELTY - The method involves carrying out a surface treatment electrochemical polishing for removing impurities on a substrate. Chemical vapor deposition process is utilized to carry out growth of graphene under the condition of first carbon source flow so as to obtain a multilayer graphene film. Selective etching is carried out under the condition of second carbon source flow to obtain a large-area continuous single-layer graphene film, where the carbon source flow is greater than the second carbon source flow. USE - Method for manufacturing large-area continuous single-layer graphene film (claimed). ADVANTAGE - The method enables utilizing two-step carbon source supply, first high carbon source grows multi-layer graphene large-area thin film, maintaining long-term supply of small carbon source and preferentially etching multi-layer area so that a large-area continuous single-layer graphene film is obtained. DESCRIPTION OF DRAWING(S) - The drawing shows a graph representing method for manufacturing large-area continuous single-layer graphene film. (Drawing includes non-English language text).