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  • 专利标题:   Manufacture of nitrogen-doped graphene involves adding hydroxyl radical acceptor to aqueous graphite oxide solution, adding nitrogen precursor to solution, and irradiating radiation.
  • 专利号:   KR1500880-B1
  • 发明人:   JUNG H, KANG Y M, KANG M, LEE D H, JO M R, YANG J H
  • 专利权人:   UNIV DONGGUK IND ACAD COOP FOUND
  • 国际专利分类:   B01J019/08, C01B031/02
  • 专利详细信息:   KR1500880-B1 12 Mar 2015 C01B-031/02 201546 Pages: 24
  • 申请详细信息:   KR1500880-B1 KR153108 10 Dec 2013
  • 优先权号:   KR153108

▎ 摘　　要

NOVELTY - Hydroxyl radical acceptor is added to aqueous graphite oxide solution, nitrogen precursor is added to obtained solution, and radiation is irradiated to obtained mixture to obtain nitrogen-doped graphene. USE - Manufacture of nitrogen-doped graphene (claimed). ADVANTAGE - The method provides nitrogen-doped graphene using high energy source with reduced amount of hydroxyl radical acceptor.