• 专利标题:   Providing synthesis of graphene quantum dots, by depositing graphene oxide (GO) on glassy carbon electrode (GCE) by microtip, performing electrochemical oxidation of GO deposited on GCE in three-electrode system, and fixing potential.
  • 专利号:   IN201821042455-A
  • 发明人:   KALITA H K, PALAPARTHY V S, BAGHINI M S, ASLAM M
  • 专利权人:   INDIAN INST TECHNOLOGY BOMBAY
  • 国际专利分类:   B82Y040/00, C01B032/182, C01B032/184, C25B001/00, C25B003/02
  • 专利详细信息:   IN201821042455-A 15 May 2020 C25B-003/02 202045 Pages: 19 English
  • 申请详细信息:   IN201821042455-A IN21042455 12 Nov 2018
  • 优先权号:   IN21042455

▎ 摘  要

NOVELTY - Method for providing synthesis of graphene quantum dots, involves: depositing a predefined quantity of graphene oxide (GO) on a glassy carbon electrode (GCE) using a microtip; performing an electrochemical oxidation of the GO deposited on the GCE at a predefined voltage, where the electrochemical oxidation is performed in a three-electrode system and with a preselected electrolyte, and the electrochemical oxidation is performed at one or more oxidation time intervals; and fixing a potential to a predefined fixing value for a predefined time for obtaining size tunable graphene quantum dots (GQD). USE - The method is used for synthesis of GQD which is used for humidity sensors, chemical sensors, nanoelectronic devices and biomarkers. The GQD is used as sensors for measuring soil moisture. The GQD is used in solar cells, light emitting diodes, bioimaging, and electronic displays. ADVANTAGE - The method produces high yield of size controlled GQD with high potential, provides electrochemical synthesis of GQD at room temperature, is simple and ensures low temperature and low oxidation time.