▎ 摘　　要

NOVELTY - Patterning a substrate (102) comprising germanium, comprises: providing a structure comprising the substrate, and a passivating layer of graphene (106) over a surface of the substrate; applying a resist layer (108) comprising a photoresist or an electron beam resist over the passivating layer of graphene, so that the passivating layer of graphene is disposed between the substrate and the resist layer; forming a pattern in the resist layer; transferring the pattern from the resist layer into the passivating layer of graphene; transferring the pattern from the passivating layer of graphene into the substrate to form a patterned substrate; and removing the resist layer. USE - The method is useful for patterning a substrate comprising germanium (claimed), where the substrate is useful for producing germanium nanostructures or grating structures that are used in multi-fin FETs, electronic and optoelectronic devices, or polarizers. ADVANTAGE - The method: provides high quality, single-crystalline germanium substrates, which are capable of providing a thin, high-aspect-ratio germanium nanostructures, and providing fin-FETs exhibiting improved performance and reduced power consumption; prevents the formation of water-soluble native germanium oxides that can result in the lift-off of the resist during the development of the resist; and does not require heating. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of patterning of deep periodic germanium structures. Substrate (102) Thin film of native germanium oxides (104) Passivating layer of graphene (106) Resist layer (108) Underlying portions of graphene (110)