▎ 摘　　要

NOVELTY - The detector has a metal electrode layer (13) which is formed on an insulating layer (12), and comprises a metal electrode array. The source and drain electrodes (132,133) are positioned on both sides of metal electrode array. The metal electrode array comprises several periodically spaced metal electrodes. The source, drain and metal electrodes (131) having the same thickness. A graphene channel layer (14) is formed on the metal electrode layer, completely covers the metal electrode array and covers the source and drain electrodes. USE - Terahertz detector based on graphene-based field effect transistor used in military and civil application. ADVANTAGE - The absorption rate of the terahertz radiation of the detector is improved, and the room temperature sped of the detector is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for the fabrication of terahertz detectors. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the terahertz detector based on graphene field effect transistor. Insulating layer (12) Metal electrode layer (13) Graphene channel layer (14) Metal electrode (131) Source and drain electrodes (132,133)