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  • 专利标题:   Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.
  • 专利号:   CN102874801-A
  • 发明人:   CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEM
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102874801-A 16 Jan 2013 C01B-031/04 201347 Pages: 12 Chinese
  • 申请详细信息:   CN102874801-A CN10390882 15 Oct 2012
  • 优先权号:   CN10390882

▎ 摘　　要

NOVELTY - A semiconductor substrate is provided and heated at 810-910 degrees C under hydrogen and inert atmosphere. A carbon source is then added to the surface of the substrate under the protection of hydrogen and inert atmosphere, by chemical vapor deposition method, and cooled to room temperature, to obtain graphene. USE - Preparation of graphene used for semiconductor devices. ADVANTAGE - The graphene having high quality is prepared by a simple process.