▎ 摘　　要

NOVELTY - The structure has a photoelectric detector main body provided with a silicon dioxide substrate, a thin graphene material and a channel material. A thin molybdenum disulfide material is formed in a metal electrode and an electrode adhesion layer. A silicon dioxide layer is formed on the silicon dioxide substrate and coated with graphite and molybdenum disulfide two-dimensional material. The graphite and molybdenum disulfide is bonded with the metal electrode through the electrode adhesion layer to form source and drain electrodes. USE - Graphene-disulfide lateral hetero-junction photo-detector structure. ADVANTAGE - The structure has better rectification and photoelectric characteristics. DETAILED DESCRIPTION - The silicon dioxide layer is formed as a vertical stacked structure. The silicon dioxide layer is a gate dielectric layer. An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene-disulfide-lateral hetero-junction photo electric detector structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene-disulfide lateral hetero-junction photo-detector structure.