▎ 摘　　要

NOVELTY - The method involves forming a groove (25a) in an insulating film (25). A carbon (26) is formed on the insulating film, so that the inside of the groove is embedded. A catalyst material (27) is formed on the carbon. The carbon is heat-processed and made into graphene laminated on multiple layers. The portion on the catalyst material and the insulating film of graphene is moved so as to make the graphene to remain only in the groove. USE - Manufacturing method of wiring structure for metal oxide semiconductor (MOS) transistor of semiconductor device such as semiconductor memory, rewirings, wafer level package (WLP), etc used in electronic device. ADVANTAGE - Simple wiring with low electrical resistance and low-heat resistance is obtained easily and reliably, and reliable wiring structure is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the wiring structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the manufacture of wiring structure. (Drawing includes non-English language text) Source/drain regions (14) Insulating film (25) Groove (25a) Carbon (26) Catalyst material (27)