▎ 摘　　要

NOVELTY - The device has a source or drain contact (908) that is formed on a substrate (504). A graphene channel is formed on the substrate connecting the source contact or drain contact. A dielectric layer is formed on the graphene channel with a molecular beam deposition process. A gate contact (1716) is formed over the graphene channel and on the dielectric. The gate contact is in a non-overlapping position with the source or drain contact leaving an exposed section (1918) of the graphene channel between the gate contact and the source or drain contact. USE - Device for fabricating carbon-based semiconductor device such as graphene-channel FET. ADVANTAGE - The device provide a reliability and scalability to deposit uniform and high-k dielectric layers on graphene, while at the same time inducing minimal impact to the transport in the graphene channel. The carbon signal in the titanium dioxide and lanthanum oxide samples arises from the difficulty in maintaining pristine highly oriented pyrolytic graphite (HOPG) surface during routine handling. The sample can be kept at low temperatures during deposition and hindering the mobility of adsorbed species by using molecular beam deposition. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a non-transitory tangible computer readable medium storing program for fabricating carbon-based semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a top-down view of the portions of gate dielectric. Substrate (504) Source or drain contact (908) Gate contact (1716) Exposed section (1918)