• 专利标题:   Field effect transistor integrated sensor useful for diagnosing virus, comprises switch RNA capable of recognizing virus-specific RNA and FET that detects expression of reporter gene having electrode to detect change in current flow.
  • 专利号:   KR2021050041-A, KR2323107-B1
  • 发明人:   PARK D U, SEUNGHWA B, KWONOSUK, KIM K H, PARK S, SEO G, SEOK S H, KIMSEUNGIL
  • 专利权人:   KOREA RES INST CHEM TECHNOLOGY, KOREA BASIC SCI INST, KOREA RES INST BIOSCIENCE BIOTECHNOLOG
  • 国际专利分类:   C12Q001/66, C12Q001/6897, G01N027/414, G01N033/543, G01N033/573
  • 专利详细信息:   KR2021050041-A 07 May 2021 G01N-033/543 202144 Pages: 14
  • 申请详细信息:   KR2021050041-A KR133879 25 Oct 2019
  • 优先权号:   KR133879

▎ 摘  要

NOVELTY - Field effect transistor (FET) integrated sensor comprises riboregulatory factor (switch RNA) capable of recognizing a virus-specific RNA and FET that detects expression of reporter gene of riboregulatory factor having at least one electrode that is formed to detect a change in current flow. USE - The FET integrated sensor is useful for diagnosing virus. ADVANTAGE - The FET integrated rapidly diagnoses a virus. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) virus diagnostic device comprising the sensor; and (2) method for providing information on presence or absence of a virus in a sample comprising a virus by using the sensor.