▎ 摘　　要

NOVELTY - Preparing graphene single crystal comprises introducing pure graphite with uniform thickness into a plasma generator reaction chamber, where the vacuum degree is below 500 Pa, introducing argon, oxygen or nitrogen as etching gas, controlling etching gas flow rate to 0.001-10000 ml/minute, utilizing radio frequency source to ionize the etching gas and bombarding the surface of graphite, where the graphite thickness is 5 nm. USE - The method is useful for preparing graphene single crystal. ADVANTAGE - The method: is simple; has strong controllability; produces high crystallographic graphene with good quality; and is suitable for industrial production.