• 专利标题:   Transparent electrode for electronic device, has transparent conductive film made of transparent conductive material, and flakes of two-dimensional transition metal dichalcogenide material dispersed on surface of transparent conductive film.
  • 专利号:   KR2023070829-A
  • 发明人:   KIMTAEWAN, PARK J H, CHO J, HEE J Y, YOON J H, AHN S, GWAK J, CHO A, YOO J S, EO Y J, KIM K H, SHIN D H, INYOUNG C, MIN S S, LEE S M, LEE A, CHAN H
  • 专利权人:   KOREA INST ENERGY RES, UNIV CHONBUK NAT IND COOP FOUND
  • 国际专利分类:   H01B013/00, H01B005/14
  • 专利详细信息:   KR2023070829-A 23 May 2023 H01B-005/14 202349 Pages: 18
  • 申请详细信息:   KR2023070829-A KR156813 15 Nov 2021
  • 优先权号:   KR156813

▎ 摘  要

NOVELTY - Transparent electrode with improved contact characteristics comprises a transparent conductive film made of a transparent conductive material; and flakes of a two-dimensional TMD (transition metal dichalcogenide) material dispersed and arranged on the surface of the transparent conductive film. The transparent conductive film contains indium tin oxide, fluorine doped tin oxide, doped zinc oxide, graphene, carbon nanotubes, delafossite-based material, transition metal-based perovskite oxide, organic film, poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate or conductive polymer. USE - Transparent electrode is useful in electronic device for forming transparent electrode (all claimed). ADVANTAGE - The contact characteristics of the transparent electrode with respect to the semiconductor is improved by inserting a flake of a two-dimensional transition metal dichalcogenide (TMD) material between the transparent electrodes.