▎ 摘　　要

NOVELTY - The method involves transferring graphene to surface of window layer of GaAs epitaxial wafer to form a graphene layer. A heavily doped GaAs cap layer is prepared on the surface of the graphene layer. A back electrode is prepared on the surface of GaAs epitaxial wafer substrate and a front electrode is prepared on the surface of the cap layer. The cap layer is etched between front electrode grid lines by chemical etching method to expose the graphene layer and a anti-reflective layer is prepared on the surface of the exposed graphene layer. USE - Method for preparing graphene/gallium arsenide solar battery. ADVANTAGE - The lateral transport of photogenerated carriers is promoted and composite center of photogenerated current is reduced. The series resistance is reduced and filling factor is improved. The photoelectric conversion efficiency of solar battery is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing graphene/gallium arsenide solar battery. (Drawing includes non-English language text)