• 专利标题:   Graphene-silicon-based solar cell annular insulating layer structure, has rear electrode provided silicon sheet that is provided with silicon-di-oxide layer, and graphene film connected with side surface of front electrode.
  • 专利号:   CN206441744-U
  • 发明人:   KUANG Y, MA Y, NI Z, WEI Q, YANG X, ZHU D, LIU Y, FENG J
  • 专利权人:   CHANGSHU INST TECHNOLOGY, SUZHOU TALESUN SOLAR TECHNOLOGIES CO LTD
  • 国际专利分类:   H01L031/0352, H01L031/0745, H01L031/18
  • 专利详细信息:   CN206441744-U 25 Aug 2017 H01L-031/0352 201765 Pages: 5 Chinese
  • 申请详细信息:   CN206441744-U CN21282972 28 Nov 2016
  • 优先权号:   CN21282972

▎ 摘  要

NOVELTY - The utility model claims a graphene silicon-based solar cell has an annular insulating layer structure, comprising a back electrode, a silicon chip is set on the back electrode, silicon chip is provided with a silicon dioxide layer. the silicon dioxide layer is an annular structure with a through hole, silicon dioxide layer thickness of the monocrystal silicon sheet is 0.2 to 2 microns, the surface of the silicon dioxide layer and a silicon dioxide layer through hole exposed mono-crystalline silicon sheet is set on the surface of the graphene film, the graphene film is set on the surface of front electrode. Compared with annular insulating layer structure of graphene efficiency with traditional silicon-based solar battery structure is obviously improved.