• 专利标题:   Forming in-situ engineered defects in graphene, comprises manipulating surface of single crystal region having hexagonal crystal lattice on a substrate to create non-planar features and epitaxially forming layer of carbon atoms on surface.
  • 专利号:   US2012048181-A1, US8632633-B2
  • 发明人:   BARKER D L, ZELINSKI B J, OWENS W R
  • 专利权人:   RAYTHEON CO
  • 国际专利分类:   C30B025/20, C30B029/02
  • 专利详细信息:   US2012048181-A1 01 Mar 2012 C30B-025/20 201218 Pages: 16 English
  • 申请详细信息:   US2012048181-A1 US868566 25 Aug 2010
  • 优先权号:   US868566

▎ 摘  要

NOVELTY - Forming in-situ engineered defects in graphene, comprises: (a) providing (100) a substrate including a single crystal region on a surface of the substrate, the region having a hexagonal crystal lattice substantially lattice-matched to graphene; (b) manipulating (102) the surface of the single crystal region to create at least one non-planar features in the hexagonal crystal lattice; and (c) epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the non-planar features in a graphene sheet. USE - The method is useful for forming in-situ engineered defects in graphene. ADVANTAGE - The method: utilizes substrate which forms a template that can be reused to produce many graphene sheets; requires less time; and is cost effective. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) forming in-situ engineered defects in graphene, comprising: (a)-(b) as above per se; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to form a graphene sheet, where the non-planar features straining and asymmetrically distorting the hexagonal crystal lattice of the epitaxially formed graphene to reproduce in-situ engineered stone-wales defects or defect pairs over the nonplanar features in a graphene sheet; and (2) forming in-situ engineered defects in graphene, comprising: (a)-(b) as above per se; epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the non-planar features in a first graphene sheet; removing (106) the graphene sheet including the in-situ engineered defects; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the non-planar features in a second graphene sheet substantially similar to the first graphene sheet. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of an epitaxial process for forming engineered defects in-situ with graphene.