• 专利标题:   Graphene preparation comprises heating loaded copper metal layer of substrate to melting point and copper phase, and depositing compound using chemical vapor deposition process on surface of copper metal layer.
  • 专利号:   CN102491315-A
  • 发明人:   CHEN J, GENG D, XUE Y, LIU Y, WU B, YU G, GUO Y, HUANG L
  • 专利权人:   CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102491315-A 13 Jun 2012 C01B-031/04 201279 Pages: 14 Chinese
  • 申请详细信息:   CN102491315-A CN10405494 08 Dec 2011
  • 优先权号:   CN10405494

▎ 摘  要

NOVELTY - A graphene is prepared by, in atmosphere without oxygen, heating loaded copper metal layer of substrate to melting point and copper phase, and depositing compound using chemical vapor deposition process on surface of copper metal layer. USE - Method for preparing graphene (claimed). ADVANTAGE - The method is simple, provides high product quality, and can be used for large scale production.