• 专利标题:   Organic semiconductor material for organic semiconductor layer of semiconductor device, comprises graphene derivative having substituent(s) with fluorine atom.
  • 专利号:   JP2007019086-A
  • 发明人:   MORI T, TAKEUCHI H, KIKUZAWA Y
  • 专利权人:   TOYOTA CHUO KENKYUSHO KK
  • 国际专利分类:   C07C022/04, H01L029/786, H01L051/05, H01L051/30
  • 专利详细信息:   JP2007019086-A 25 Jan 2007 H01L-051/05 200717 Pages: 61 Japanese
  • 申请详细信息:   JP2007019086-A JP196355 05 Jul 2005
  • 优先权号:   JP196355

▎ 摘  要

NOVELTY - An organic semiconductor material is a graphene derivative having at least one substituent with one or more fluorine atom. USE - For organic semiconductor layer of semiconductor device such as field effect transistor (claimed), integrated circuit, and display device. ADVANTAGE - The novel graphene derivative has high carrier mobility, and stability with respect to heat or oxidation. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) semiconductor device having an organic semiconductor layer including the organic semiconductor material; and (2) field effect transistor (1) having an organic semiconductor layer (16) including the organic semiconductor material. DESCRIPTION OF DRAWING(S) - The figure shows the structure of field effect transistor containing the organic semiconductor material. Field effect transistor (1) Substrate (10) Gate electrode (12) Gate insulating layer (14) Organic semiconductor film (16)