▎ 摘　　要

NOVELTY - Preparing graphene field effect transistor, comprises forming monolithically patterned graphene layer (204) with source electrode (206), drain electrode (208) and semiconductor channel region (210); transferring patterned graphene onto elastic substrate; forming insulation layer (212) on the semiconductor channel region; and forming gate electrode on the insulation layer. USE - The transistor is useful for making integrated circuit, logic device, memory device and radio frequency identification. ADVANTAGE - The preparation method is simple and economical. The transistor has excellent mechanical flexibility, light transmittance, electronic functionality and high elasticity; can be operated under low voltage; and exhibits stable behavior under high strain. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene field effect transistor, prepared by the above method, having stable behavior under external strain of less than 5%. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of graphene field effect transistor. Graphene layer (204) Source electrode (206) Drain electrode (208) Semiconductor channel region (210) Insulation layer (212)