▎ 摘　　要

NOVELTY - Method of growing graphene directly on substrate involves placing substrate material into a plasma-enriched chemical vapor phase deposition cavity, vacuumizing, heating the substrate to 400-600 degrees C, flowing carbureted hydrogen gas and other inert gases, controlling the pressure of the gas to 1 Torr or less, supplying plasma, enabling the carbureted hydrogen to be cracked into active groups, making groups to react on surfaces of substrates at 400-600 degrees C and growing graphene directly on substrate surface. USE - Method of growing graphene directly on substrate. ADVANTAGE - The method efficiently and economically grows high-quality graphene directly on substrate.