▎ 摘　　要

NOVELTY - The battery has a hollow area formed between a front electrode and a heavy-doped gallium arsenide cap layer. The hollow area is located corresponding to a positive electrode grid line. The hollow area is coated with anti-reflection coating. The heavy-doped gallium arsenide cap layer is arranged with a graphene layer. A gallium arsenide epitaxial wafer is formed with a single-junction or multi-junction structure, unijunction gallium arsenide or germanium structure, aluminum dual-junction gallium indium phosphor or indium gallium phosphorus structure. USE - Graphene/gallium arsenide solar battery. ADVANTAGE - The battery transfers the single-layer or multi-layer graphene between single-junction or multi junction window layer and the heavy-doped gallium arsenide cap layer utilizes a graphene transfer technique so as to reduce photo-loading flow and series resistance and increase fill factor in an effective manner, and reduces positive electrode grid line density and width, avoids light loss and increases short-circuit current and open-circuit voltage. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene/gallium arsenide solar battery.