▎ 摘　　要

NOVELTY - The method involves providing a front layer structure. The front layer structure is formed with a groove. A ruthenium layer is formed on a bottom surface and a side surface portion of the groove. The ruthenium layer is formed as a diffusion barrier layer. A main body layer is formed, where the main body layer completely fills the groove, and a material of the main body layer is selected from cobalt, graphene, copper-germanium, nickel-germanium, cobalt-germanium and cobalt-aluminum. A surface of the ruthenium layer is extended in an outside of the groove. Chemical mechanical grinding process is performed to remove the main body layer and the ruthenium layer. A metal interconnection structure is formed on the ruthenium layer and the main body layer. The main body layer is formed on the groove. USE - Metal interconnection structure forming method. ADVANTAGE - The method enables reducing metal interconnection resistance if the metal interconnection resistance is less than copper interconnection resistance, improving device performance, eliminating papillary defect and corrosion defect and improving optimizing performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a metal interconnection structure forming method. (Drawing includes non-English language text).