▎ 摘　　要

NOVELTY - The method involves silicon carbide substrate, and forming a graphene layer on a surface of the silicon carbide substrate by performing laser annealing on the surface of the silicon carbide substrate in which a laser beam is irradiated. A silicon carbide layer is formed on the silicon substrate, where wavelength of the laser beam is 180-400 nano meters. A graphene channel is formed on the surface of the silicon carbide layer. A gate oxide layer is formed on the graphene channel. A source electrode and a drain electrode are formed on ends of the graphene channel respectively. USE - Graphene layer manufacturing method for graphene FET. ADVANTAGE - The method forms the graphene layer on the surface of the silicon carbide substrate by heating the silicon carbide substrate with the laser beam of UV range without affecting the silicon substrate. The method can easily form the FET that utilizes graphene nano ribbon as a channel by selectively forming the graphene channel region on the partial domain of the silicon carbide layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene field effect transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a graphene layer manufacturing method.