• 专利标题:   Flexible substrate graphene site effect transistor manufacturing method, involves coating electrode with water-soluble molecule thin film, and connecting graphene device with silicon chip to obtain substrate graphene site effect transistor.
  • 专利号:   CN104716043-A, CN104716043-B
  • 发明人:   FANG Y, HUANG K, LI H, YANG L
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   H01L021/336, H01L021/683, H01L029/78
  • 专利详细信息:   CN104716043-A 17 Jun 2015 H01L-021/336 201562 Pages: 13 Chinese
  • 申请详细信息:   CN104716043-A CN10682616 12 Dec 2013
  • 优先权号:   CN10682616

▎ 摘  要

NOVELTY - The method involves coating a solution molecule film with a silicon chip. An electrode is coated with a water-soluble molecule thin film. A graphene layer is covered with the water-soluble molecule thin film. Another electrode is coated with the water-soluble molecule thin film. The graphene site effect transistor is connected with the later electrode. The graphene site effect transistor is fixed with the silicon chip that is coated on a non solution molecule film. A graphene device is connected with the silicon chip to obtain a flexible substrate graphene site effect transistor. USE - Flexible substrate graphene site effect transistor manufacturing method. ADVANTAGE - The method enables manufacturing flexible substrate graphene site effect transistor in simple manner. The method enables reducing manufacturing cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a flexible substrate graphene site effect transistor manufacturing method. '(Drawing includes non-English language text)'