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  • 专利标题:   Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.
  • 专利号:   CN114203326-A
  • 发明人:   WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C
  • 专利权人:   CHINA NUCLEAR POWER DESIGN INST
  • 国际专利分类:   B05D007/00, C23C016/26, C23C018/32, C23C028/00, C25D003/56, C25D007/00, C25D009/04, G21H001/06
  • 专利详细信息:   CN114203326-A 18 Mar 2022 G21H-001/06 202245 Chinese
  • 申请详细信息:   CN114203326-A CN11517496 13 Dec 2021
  • 优先权号:   CN11517496

▎ 摘　　要

NOVELTY - The preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film, involves (S1) preparing a 63 nickel chloride film on the polymethyl methacrylate/graphene film to obtain a polymethyl methacrylate/graphene/63 nickel chloride film, (S2) contacting the polymethyl methacrylate/graphene/63 nickel chloride film prepared in step (S1) face-to-face with the polymethyl methacrylate/graphene film, so that the 63 nickel chloride film is placed between two layers of graphene, obtaining polymethyl methacrylate/graphene/63 nickel chloride/graphene/ polymethyl methacrylate film, and vacuum drying, (S3) removing the polymethyl methacrylate in the polymethyl methacrylate/graphene/63 nickel chloride/graphene/polymethyl methacrylate film to obtain the graphene/63 nickel chloride/graphene film, and (S4) placing the graphene/63 nickel chloride/graphene film in a vacuum environment for reduction treatment, and reducing the 63 nickel chloride to a 63 nickel film. USE - Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked beta radiation cell (all claimed). ADVANTAGE - The graphene-encapsulated ultra-thin nickel-63 radiation source film is prepared in simple and efficient manner. DETAILED DESCRIPTION - The preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film, involves (S1) preparing a 63 nickel chloride film on the polymethyl methacrylate/graphene film to obtain a polymethyl methacrylate/graphene/63 nickel chloride film, (S2) contacting the polymethyl methacrylate/graphene/63 nickel chloride film prepared in step (S1) face-to-face with the polymethyl methacrylate/graphene film, so that the 63 nickel chloride film is placed between two layers of graphene, obtaining polymethyl methacrylate/graphene/63 nickel chloride/graphene/ polymethyl methacrylate film, and then vacuum drying, (S3) removing the polymethyl methacrylate in the polymethyl methacrylate/graphene/63 nickel chloride/graphene/polymethyl methacrylate film to obtain the graphene/63 nickel chloride/graphene film, and (S4) placing the graphene/63 nickel chloride/graphene film obtained in step (S3) in a vacuum environment for reduction treatment, and reducing the 63 nickel chloride to a 63 nickel film. An INDEPENDENT CLAIM is included for a graphene encapsulation ultra-thin nickel-63 radiation source film.