• 专利标题:   Processing method for synthesizing graphene, involves producing flux stream which includes carbon vapor and depositing graphene material from flux stream onto heated substrate at predetermined pressure and temperature values.
  • 专利号:   US2017217776-A1
  • 发明人:   KEIDAR M, SHASHURIN A
  • 专利权人:   UNIV WASHINGTON GEORGE, KEIDAR M, SHASHURIN A
  • 国际专利分类:   C01B031/04, C23C016/01, C25B001/00
  • 专利详细信息:   US2017217776-A1 03 Aug 2017 C01B-031/04 201755 Pages: 12 English
  • 申请详细信息:   US2017217776-A1 US346380 08 Nov 2016
  • 优先权号:   US658665P, US346380

▎ 摘  要

NOVELTY - The processing method involves providing a heated substrate (56). A flux stream which includes carbon vapor is produced using an anodic arc discharge device (5), and a graphene material is deposited from the flux stream onto the heated substrate at a pressure of up to 500 Torr, while a temperature of the substrate is 700-1200 degrees Celsius. The deposited material is removed from the substrate using a collection device. USE - Processing method for synthesizing graphene for producing graphene platelets. ADVANTAGE - The processing method produces graphene at low cost, high volumes, and suitable for commercial applications. The produced graphene exhibits a uniform size. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of a plasma-based approach system for mass production of high quality graphene platelets. Arc discharge assembly (5) Anode (10) Cathode (20) Power supply (34) Substrate (56)