• 专利标题:   Graphene sheet for manufacturing electronic device, e.g. electrode or transistor, and display, e.g. organic light emitting diode (OLED), comprises regularly or irregularly patterned and thickness modulated structure on graphene surface.
  • 专利号:   WO2014117869-A1, TR201416236-A, EP2951126-A1, US2016009560-A1
  • 发明人:   KAYA I I, YANIK C, *YANIK CENK, *KAYA ISMET INONU
  • 专利权人:   UNIV SABANCI
  • 国际专利分类:   C01B031/04, C30B001/02, C30B001/10
  • 专利详细信息:   WO2014117869-A1 07 Aug 2014 C01B-031/04 201455 Pages: 24 English
  • 申请详细信息:   WO2014117869-A1 WOEP052162 04 Feb 2013
  • 优先权号:   EP715144, TR016236, WOEP052162, US14765439

▎ 摘  要

NOVELTY - Graphene sheet comprises regularly or irregularly patterned and thickness modulated structure on graphene surface here the ridging areas are integrally formed with the graphene sheet and are themselves made of graphene. USE - The graphene sheet is useful for manufacturing electronic device, e.g. electrode or transistor; and display, e.g. organic light emitting diode (OLED) (all claimed). ADVANTAGE - The graphene sheets with varying thickness provide local areas with better electrical conductivity without a substantial effect on optical properties. In method for producing the thickness modulated graphene material by way of a special capping technique, the capping structure having an array of protrusions is involved so that the capping would transfer its physical structure to the graphene surface to form areas with improved electrically conductivity and optical transparency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) an electronic device comprising the graphene sheet; (2) a display comprising the graphene sheet; and (3) a method for producing a thickness modulated graphene sheet which involves providing a silicon carbide primary substrate, providing a capping substrate having a modulated surface, positioning the capping substrate on a top surface of the primary substrate and providing a spacing to form a cavity with a modulated gap, heating the substrates to a temperature sufficient to sublimate silicon from the primary substrate and to form a graphene layer on it, and proceeding with the sublimation step until a thickness modulated graphene structure is obtained.