• 专利标题:   New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.
  • 专利号:   CN114213258-A
  • 发明人:   CHANG X, JIA C, ZHANG M, LI P, GUO X
  • 专利权人:   UNIV NANKAI, BEIJING WEIMING YUANSHANG MOLECULAR TECHNOLOGY CO LTD
  • 国际专利分类:   C07C211/31, C07C211/50, C07D471/06, C07D487/22, H01L051/05, H01L051/40
  • 专利详细信息:   CN114213258-A 22 Mar 2022 C07C-211/50 202274 Chinese
  • 申请详细信息:   CN114213258-A CN11521169 13 Dec 2021
  • 优先权号:   CN11521169

▎ 摘  要

NOVELTY - Plane conjugated molecular compound is new. USE - Plane conjugated molecular compound used in single-molecule field-effect transistor (claimed). ADVANTAGE - The plane conjugated molecular compound can realize precise control of the preparation of single-molecule field-effect transistor devices and the stability of measurement, and makes single-molecule field-effect transistors having strong gate electric field control capability, good stability and integration. DETAILED DESCRIPTION - Plane conjugated molecular compound of formula H2N-R2-R1-R2-NH2 is new. R1=selected from formula (I)-(III); R2=selected from -(CH2)n-; and n=1-6 or a group of formula (IV). An INDEPENDENT CLAIM is included for a method for preparing a single-molecule field-effect transistor, which involves preparing graphene gate electrode layer on the substrate, preparing bismuth selenite dielectric bottom layer on the upper surface of the graphene gate electrode layer, preparing a top layer of hexagonal boron nitride medium on the upper surface of the bottom layer of bismuth selenite medium, preparing graphene electrode layer on the upper surface of the hexagonal boron nitride dielectric top layer, constructing a nano-gap from the graphene electrode layer to obtain a graphene point electrode, connecting the graphene point electrode and the molecular heterojunction through an amide bond, covering the upper surface of the graphene point electrode and the molecular heterojunction with hexagonal boron nitride protective layer to obtain the single-molecule field-effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the single-molecule field-effect transistor. 1Graphene gate electrode layer 2Bismuth selenite dielectric bottom layer 3Hexagonal boron nitride dielectric top layer 4Graphene source end Electrode 5Graphene drain electrode