▎ 摘　　要

NOVELTY - Processing substrate involves carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container, forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film, forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas, and forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas. USE - Method for processing a substrate e.g. silicon substrate and insulating film. ADVANTAGE - The method enables to form the graphene film on the silicon oxide layer by supplying the carbon-containing gas into the processing container with the plasma of the carbon containing gas, so that the graphene films is formed on the surface of the silicon-containing film in efficient manner. The method ensures that the adsorption layer is formed on a surface of a silicon substrate and the silicon film is formed in effective manner, which prevents the oxygen containing gas from getting adsorbed on the substrate, and prevents the substrate from getting contaminated by the oxygen. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a substrate processing apparatus, which comprises processing container configured to accommodate a substrate having a silicon-containing film on a surface of the substrate, and controller configured to control the substrate processing apparatus to carry the substrate into the processing container, where controller is configured to control the substrate processing apparatus to supply an oxygen-containing gas into the processing container and cause the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film to form an adsorption layer, controller is configured to control the substrate processing apparatus to supply an argon-containing gas into the processing container and cause the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas to form a silicon oxide layer, and controller is configured to control the substrate processing apparatus to supply a carbon-containing gas into the processing container and form a graphene film on the silicon oxide layer with plasma of the carbon-containing gas.