▎ 摘　　要

NOVELTY - Preparing silicon carbide-based twisted multilayer graphene material involves using chemical vapor deposition to grow graphene materials on silicon carbide substrates, taking hydrogen as carrier gas, and introducing gaseous carbon source to grow at 1500-1700 degrees C and 910-990 mbar for 10-45 minutes. USE - The method is useful for preparing silicon carbide-based twisted multilayer graphene material. ADVANTAGE - The method prepares the silicon carbide-based twisted multilayer graphene material with uniform and flat surface, high crystal quality and excellent electrical characteristics.