▎ 摘　　要

NOVELTY - Photosensor device (10) comprises a substrate (11), a graphene layer (15) provided on the substrate, a pair of electrodes (14a, 14b) electrically connected to the graphene layer, and a passivation layer (12) formed of a resin and configured to cover graphene layer. The graphene layer has holes which are periodically arranged. The passivation is provided with openings that communicate with the holes, side surfaces of the holes and inner walls of the openings being continuously covered with an insulating thin film. The insulating film is provided between graphene layer and the gate electrode. The openings are formed by electron beam lithography. USE - Photosensor device for use in automatic doors, security camera systems, and inspections of infrastructure. Uses include but are not limited to a quantum infrared sensor, a thermal infrared detector, and a graphene infrared detector. ADVANTAGE - The Infrared sensors detect infrared rays radiated from objects with thermal energies. The photosensor device has high sensitivity with respect to a desired wavelength band by controlling the combination and/or composition of materials, film thickness, and so on. They are also operable with wideband responsivity, operable at room temperature. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a photosensor device, which involves: (a) forming a graphene layer on an insulating film on a substrate; (b) forming a pair of electrodes electrically connected to the graphene layer; (c) forming a passivation layer of a resin, covering the graphene layer; (d) forming openings in the passivation layer, the openings being periodically arranged; (e) forming holes in the graphene layer, using the passivation layer with the openings as a mask, the holes being periodically arranged; and (f) forming an insulating thin film over an entire surface of the substrate having the openings and the holes. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic plan view of a photosensor device. Photosensor device (10) Substrate (11) Passivation layer (12) Pair of electrodes (14a, 14b) Graphene layer (15)