• 专利标题:   Self-assembly preparation of solid-liquid interface of graphene oxide film by removing natural oxide layer of aluminum or aluminum alloy, carrying out anode oxidation treatment, dipping in graphene oxide solution, forming film and baking.
  • 专利号:   CN101654245-A, CN101654245-B
  • 发明人:   GUO M, LV W, WU S, YANG Q, ZHANG S
  • 专利权人:   UNIV TIANJIN
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN101654245-A 24 Feb 2010 C01B-031/04 201026 Pages: 13 Chinese
  • 申请详细信息:   CN101654245-A CN10308170 10 Oct 2009
  • 优先权号:   CN10308170

▎ 摘  要

NOVELTY - Self-assembly preparation of solid-liquid interface of graphene oxide film comprises adding graphite oxide into solvent and ultrasonically treating; removing natural oxide layer from aluminum or aluminum alloy, placing into acidic electrolytic solution and carrying out anode oxidation treatment; curing in mixed solution of phosphoric acid and chromic acid to remove anode oxidation film; carrying out anode oxidation; and dipping prepared anode aluminum film oxide in prepared soluble graphene oxide solution, forming film and air-drying or baking to obtain graphene oxide film. USE - Method for self-assembly preparation of solid-liquid interface of graphene oxide film (claimed). ADVANTAGE - The method has simple operation and provides quick formation of film with adjustable thickness and size. DETAILED DESCRIPTION - Self-assembly preparation of solid-liquid interface of graphene oxide film comprises: (A) adding graphite oxide into solvent to a concentration of 1-30 mg/mL and ultrasonically treating for 1.5-10 hours using ultrasonic power of 20-300 W; (B) removing natural oxide layer from aluminum or aluminum alloy, placing into acidic electrolytic solution and carrying out anode oxidation treatment using voltage of 8-235 V; (C) curing in mixed solution of phosphoric acid and chromic acid to remove anode oxidation film to obtain highly ordered shell-shaped convex-concave structure on surface of metal aluminum; (D) carrying out anode oxidation at the same conditions, where recess is used as starting forming site for pore and is formed with highly ordered pore array to obtain multipore type anode aluminum oxide solid film which is adhered to aluminum substrate; and (E) dipping prepared anode aluminum film oxide in prepared soluble graphene oxide solution, standing and forming film, taking out and air-drying or baking at normal temperature to obtain graphene oxide film.