1. 平台首页
  2. 国际专利信息
  • 专利标题:   Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.
  • 专利号:   CN104152991-A
  • 发明人:   DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C30B025/00, C30B029/02
  • 专利详细信息:   CN104152991-A 19 Nov 2014 C30B-029/02 201506 Pages: 8 Chinese
  • 申请详细信息:   CN104152991-A CN10441163 02 Sep 2014
  • 优先权号:   CN10441163

▎ 摘　　要

NOVELTY - Preparation of single-crystal graphene domain involves performing chemical vapor deposition on (110)-plane of semiconductor material as catalytic substrate using gaseous or solid carbon. USE - Preparation of single-crystal graphene domain (claimed). ADVANTAGE - The method enables preparation of orderly arranged single-crystal graphene domain having high quality and suppressed defect, by controlling mono-crystalline graphene size, shape and density.