• 专利标题:   Producing atomic film comprises physically peeling atomic film from multi-layered atomic film or layered bulk crystal using peeling substrate, and transferring peeled atomic film onto transfer substrate.
  • 专利号:   JP2022137690-A
  • 发明人:   HAYASHI K
  • 专利权人:   FUJITSU LTD
  • 国际专利分类:   C01B032/19, H01L021/02
  • 专利详细信息:   JP2022137690-A 22 Sep 2022 H01L-021/02 202288 Pages: 15 Japanese
  • 申请详细信息:   JP2022137690-A JP037297 09 Mar 2021
  • 优先权号:   JP037297

▎ 摘  要

NOVELTY - Method for producing an atomic film, comprises physically peeling an atomic film from a multi-layered atomic film or a layered bulk crystal using a peeling substrate, and transferring the peeled atomic film onto a transfer substrate. USE - The method is used for producing an atomic film (claimed) such as graphene, layered chalcogenide, hexagonal boron nitride, silicene, germanene, and stanene. ADVANTAGE - The method is capable of exfoliating and separating a large-area atomic film from a multi-layered atomic film or a bulk layered crystal. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the atomic film separated from a multilayer atomic film or a layered bulk crystal, where the atomic film has an area of 100 μ m2or more.