▎ 摘　　要

NOVELTY - The device (202) has a bottom electrode (102) formed on a specific material (101). An active insulating layer (103) includes an oxide graphene multi-layer on the bottom electrode. An upper electrode (104) is arranged on an active insulating layer. The oxide graphene multi-layer is doped with an oxide graphene layer (105) and laminated with non-metal, where the non-metal is selected from a group consisting of combinations of 16 group and periodic table 15 group, nitrogen or sulfur, and the oxide graphene layer includes negative charge and the non-metal includes positive charge. USE - Non-volatility resistance alteration memory device. ADVANTAGE - The device can be manufactured based on multi-component system so as to improve switching characteristic of non-volatility anode, reliability and stability of the device and reduce retention time of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a non-volatility resistance alteration memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a non-volatility resistance alteration memory device. Specific material (101) Bottom electrode (102) Active insulating layer (103) Upper electrode (104) Oxide graphene layer (105) Non-volatility resistance alteration memory device (202)